APT15DQ100BG
  • Share:

Microchip Technology APT15DQ100BG

Manufacturer No:
APT15DQ100BG
Manufacturer:
Microchip Technology
Package:
Tube
Datasheet:
APT15DQ100BG Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 15A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:3 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):235 ns
Current - Reverse Leakage @ Vr:100 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 [B]
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$1.79
502

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT15DQ100BG APT15DQ100KG   APT15DQ120BG   APT75DQ100BG   APT15D100BG  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1200 V 1000 V 1000 V
Current - Average Rectified (Io) 15A 15A 15A 75A 15A
Voltage - Forward (Vf) (Max) @ If 3 V @ 15 A 3 V @ 15 A 3.3 V @ 15 A 3 V @ 75 A 2.3 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 235 ns 235 ns 240 ns 250 ns 260 ns
Current - Reverse Leakage @ Vr 100 µA @ 1000 V 100 µA @ 1000 V 100 µA @ 1200 V 100 µA @ 1000 V 250 µA @ 1000 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-220-2 TO-247-3 TO-247-2 TO-247-2
Supplier Device Package TO-247 [B] TO-220 [K] TO-247 [B] TO-247 [B] TO-247 [B]
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SS3H10-M3/9AT
SS3H10-M3/9AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 3A 100V DO-214AB
FFSB1065B
FFSB1065B
onsemi
650V 10A SIC SBD GEN1.5
MB110_R1_00001
MB110_R1_00001
Panjit International Inc.
SMB, SKY
RS1MDF-13
RS1MDF-13
Diodes Incorporated
DIODE GEN PURP 1KV 1A DFLAT
SS33-M3/57T
SS33-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 3A 30V DO-214AB
VS-25FR60M
VS-25FR60M
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 25A DO203AA
PR3004G-T
PR3004G-T
Diodes Incorporated
DIODE GEN PURP 400V 3A DO201AD
AU2PJHM3/87A
AU2PJHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.6A TO277A
1N4005-N-0-2-BP
1N4005-N-0-2-BP
Micro Commercial Co
DIODE GEN PURP 600V 1A DO-41
S3AHM6G
S3AHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
ES2JHR5G
ES2JHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
RS1BL RFG
RS1BL RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA

Related Product By Brand

MSMBG24AE3
MSMBG24AE3
Microchip Technology
TVS DIODE 24VWM 38.9VC SMBG
MSMBG43A
MSMBG43A
Microchip Technology
TVS DIODE 43VWM 69.4VC SMBG
DSA1121CA1-040.0000VAO
DSA1121CA1-040.0000VAO
Microchip Technology
OSC MEMS AUTO -40C-125C SMD
DSC6021JI2A-009S
DSC6021JI2A-009S
Microchip Technology
MEMS OSC (FS) ULTRA LOW POWER LV
1N6642US
1N6642US
Microchip Technology
DIODE GEN PURP 75V 300MA D5D
CDLL4711E3
CDLL4711E3
Microchip Technology
VOLTAGE REGULATOR
JAN1N4616DUR-1/TR
JAN1N4616DUR-1/TR
Microchip Technology
VOLTAGE REGULATOR
DSPIC33CK256MP606-I/MR
DSPIC33CK256MP606-I/MR
Microchip Technology
16 BIT DSC, SINGLE CORE, 256K FL
23K640-I/P
23K640-I/P
Microchip Technology
IC SRAM 64KBIT SPI 20MHZ 8DIP
25AA256-I/MF
25AA256-I/MF
Microchip Technology
IC EEPROM 256KBIT SPI 10MHZ 8DFN
AT27BV010-90VI
AT27BV010-90VI
Microchip Technology
IC EPROM 1MBIT PARALLEL 32VSOP
AT49F002N-70PI
AT49F002N-70PI
Microchip Technology
IC FLASH 2MBIT PARALLEL 32DIP