Microchip Technology-APT100GT60B2RG - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	148 A
Current - Collector Pulsed (Icm):	300 A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 100A
Power - Max:	500 W
Switching Energy:	3.25mJ (on), 3.125mJ (off)
Input Type:	Standard
Gate Charge:	460 nC
Td (on/off) @ 25°C:	40ns/320ns
Test Condition:	400V, 100A, 4.3Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	-

Microchip Technology APT100GT60B2RG