APT10086BVFRG
  • Share:

Microchip Technology APT10086BVFRG

Manufacturer No:
APT10086BVFRG
Manufacturer:
Microchip Technology
Package:
Tube
Datasheet:
APT10086BVFRG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 13A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:860mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:4440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247 [B]
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$21.09
32

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT10086BVFRG APT10086BVRG  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 860mOhm @ 500mA, 10V 860mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V 275 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 4440 pF @ 25 V 4440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 [B] TO-247 [B]
Package / Case TO-247-3 TO-247-3

Related Product By Categories

SSM3J56ACT,L3F
SSM3J56ACT,L3F
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.4A CST3
FCPF22N60NT
FCPF22N60NT
onsemi
MOSFET N-CH 600V 22A TO220F
IPW50R350CP
IPW50R350CP
Infineon Technologies
N-CHANNEL POWER MOSFET
2SK3740-ZK-E1-AZ
2SK3740-ZK-E1-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
XPW4R10ANB,L1XHQ
XPW4R10ANB,L1XHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A AEC-Q101
AOTF2916L
AOTF2916L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 5A/17A TO220-3F
AOTF4126
AOTF4126
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 6A/27A TO220-3F
SIHB25N50E-GE3
SIHB25N50E-GE3
Vishay Siliconix
MOSFET N-CH 500V 26A TO263
IXTA86N20T
IXTA86N20T
IXYS
MOSFET N-CH 200V 86A TO263
IRLML2402TR
IRLML2402TR
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT-23
ZVN3306ASTOA
ZVN3306ASTOA
Diodes Incorporated
MOSFET N-CH 60V 270MA E-LINE
2SK3816-DL-1E
2SK3816-DL-1E
onsemi
MOSFET N-CH 60V 40A TO263-2

Related Product By Brand

SMLJ45AE3/TR13
SMLJ45AE3/TR13
Microchip Technology
TVS DIODE 45VWM 72.7VC DO214AB
MASMBJ60A
MASMBJ60A
Microchip Technology
TVS DIODE 60VWM 96.8VC SMBJ
MXRT100KP58A
MXRT100KP58A
Microchip Technology
TVS DIODE 58VWM 114VC CASE 5A
DSC1001AE2-004.0000
DSC1001AE2-004.0000
Microchip Technology
MEMS OSC XO 4.0000MHZ CMOS SMD
DSC1033CI2-015.3600
DSC1033CI2-015.3600
Microchip Technology
MEMS OSC XO 15.3600MHZ CMOS SMD
DSC6311JI1BB-012.0000T
DSC6311JI1BB-012.0000T
Microchip Technology
MEMS OSCILLATOR SMD
JANTXV1N5283UR-1/TR
JANTXV1N5283UR-1/TR
Microchip Technology
CURRENT REGULATOR
CDLL5914C
CDLL5914C
Microchip Technology
DIODE ZENER 3.6V 1.25W DO213AB
DSPIC33EV128GM002-I/SO
DSPIC33EV128GM002-I/SO
Microchip Technology
IC MCU 16BIT 128KB FLASH 28SOIC
AT24C512C-SSHM-B
AT24C512C-SSHM-B
Microchip Technology
IC EEPROM 512KBIT I2C 8SOIC
AT24C512BN-SH25-B
AT24C512BN-SH25-B
Microchip Technology
IC EEPROM 512KBIT I2C 1MHZ 8SOIC
TC7117CKW713
TC7117CKW713
Microchip Technology
IC DRVR 7 SEG 3 1/2 DIGIT 44MQFP