2N6660
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Microchip Technology 2N6660

Manufacturer No:
2N6660
Manufacturer:
Microchip Technology
Package:
Bag
Datasheet:
2N6660 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 410MA TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AD, TO-39-3 Metal Can
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$16.12
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Similar Products

Part Number 2N6660 2N6661   2N6760  
Manufacturer Microchip Technology Microchip Technology Harris Corporation
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 90 V 400 V
Current - Continuous Drain (Id) @ 25°C 410mA (Ta) 350mA (Tj) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V 4Ohm @ 1A, 10V 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 39 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 24 V 50 pF @ 24 V -
FET Feature - - -
Power Dissipation (Max) 6.25W (Tc) 6.25W (Tc) 4W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-39 TO-39 TO-204AA
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can TO-204AA, TO-3

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