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| Part Number | 2N6423 | 2N6426 | 2N6424 | 2N6425 | 2N6427 | 2N6123 | 2N6420 | 2N6421 | 2N6422 |
|---|---|---|---|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | NTE Electronics, Inc | Microchip Technology | Microchip Technology | onsemi | NTE Electronics, Inc | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Obsolete | Active | Active | Active | Active |
| Transistor Type | PNP | NPN - Darlington | PNP | PNP | NPN - Darlington | NPN | PNP | PNP | PNP |
| Current - Collector (Ic) (Max) | 2 A | 500 mA | 1 A | 1 A | 500 mA | 4 A | 1 A | 2 A | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | 40 V | 225 V | 300 V | 40 V | 80 V | 175 V | 250 V | 300 V |
| Vce Saturation (Max) @ Ib, Ic | - | 1.5V @ 500µA, 500mA | - | - | 1.5V @ 500µA, 500mA | 1.4V @ 1A, 4A | - | - | - |
| Current - Collector Cutoff (Max) | - | 1µA | - | - | 1µA | 1mA | - | - | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 30000 @ 100mA, 5V | - | - | 20000 @ 100mA, 5V | 20 @ 1.5A, 2V | - | - | - |
| Power - Max | 35 W | 625 mW | 20 W | 20 W | 625 mW | 40 W | 35 W | 35 W | 35 W |
| Frequency - Transition | - | - | - | - | - | 2.5MHz | - | - | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - | - | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-213AA, TO-66-2 | TO-226-3, TO-92-3 Long Body | TO-213AA, TO-66-2 | TO-213AA, TO-66-2 | TO-226-3, TO-92-3 Long Body | TO-220-3 | TO-213AA, TO-66-2 | TO-213AA, TO-66-2 | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) | TO-92 (TO-226) | TO-66 (TO-213AA) | TO-66 (TO-213AA) | TO-92 (TO-226) | TO-220 | TO-66 (TO-213AA) | TO-66 (TO-213AA) | TO-66 (TO-213AA) |
