Microchip Technology-2N6341 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6341	2N6341G	2N6351	2N6301	2N6331	2N6340
Manufacturer	Microchip Technology	onsemi	Microchip Technology	Microchip Technology	Microchip Technology	NTE Electronics, Inc
Product Status	Active	Active	Active	Active	Active	Active
Transistor Type	NPN	-	NPN - Darlington	-	PNP	NPN
Current - Collector (Ic) (Max)	50 µA	-	5 A	-	30 A	25 A
Voltage - Collector Emitter Breakdown (Max)	150 V	-	150 V	-	100 V	140 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 2.5A, 25A	-	2.5V @ 10mA, 5A	-	-	1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max)	50µA	-	-	-	-	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10A, 2V	-	1000 @ 5A, 5V	-	-	50 @ 500mA, 2V
Power - Max	200 W	-	1 W	-	200 W	200 W
Frequency - Transition	-	-	-	-	-	40MHz
Operating Temperature	-65°C ~ 175°C (TJ)	-	-65°C ~ 200°C (TJ)	-	-	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	-	Through Hole	-	Through Hole	Through Hole
Package / Case	TO-204AA, TO-3	-	TO-205AC, TO-33-4 Metal Can	-	TO-204AA, TO-3	TO-204AA, TO-3
Supplier Device Package	TO-3	-	TO-33	-	TO-3	TO-3

Transistor Type:	NPN
Current - Collector (Ic) (Max):	50 µA
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 2.5A, 25A
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10A, 2V
Power - Max:	200 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AA, TO-3
Supplier Device Package:	TO-3

Microchip Technology 2N6341