Microchip Technology-2N6318 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6318	2N6388	2N6338	2N6328	2N6378	2N6308	2N6315	2N6316	2N6317
Manufacturer	Microchip Technology	NTE Electronics, Inc	NTE Electronics, Inc	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active	Active	Active	Active	Active	Active
Transistor Type	PNP	NPN - Darlington	NPN	PNP	PNP	-	-	-	PNP
Current - Collector (Ic) (Max)	2 mA	10 A	25 A	30 A	50 A	-	-	-	7 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	100 V	100 V	100 V	-	-	-	60 V
Vce Saturation (Max) @ Ib, Ic	2V @ 1.75A, 7A	3V @ 100mA, 10A	1.8V @ 2.5A, 25A	-	-	-	-	-	2V @ 1.75A, 7A
Current - Collector Cutoff (Max)	2mA	1mA	50µA	-	-	-	-	-	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 500mA, 4V	1000 @ 5A, 3V	30 @ 10A, 2V	-	-	-	-	-	25 @ 2.5A, 4V
Power - Max	90 W	2 W	200 W	200 W	250 W	-	-	-	90 W
Frequency - Transition	-	-	40MHz	-	-	-	-	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 200°C (TJ)	-	-	-	-	-	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	-	-	-	Through Hole
Package / Case	TO-213AA, TO-66-2	TO-220-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	-	-	-	TO-213AA, TO-66-2
Supplier Device Package	TO-66 (TO-213AA)	TO-220	TO-204 (TO-3)	TO-3	TO-3	-	-	-	-

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 mA
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 1.75A, 7A
Current - Collector Cutoff (Max):	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 500mA, 4V
Power - Max:	90 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-213AA, TO-66-2
Supplier Device Package:	TO-66 (TO-213AA)

Microchip Technology 2N6318