Microchip Technology-2N6317 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6317	2N6387	2N6318	2N6377	2N6327	2N6517	2N6315	2N6316
Manufacturer	Microchip Technology	Harris Corporation	Microchip Technology	Microchip Technology	Microchip Technology	onsemi	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active	Active	Obsolete	Active	Active
Transistor Type	PNP	NPN - Darlington	PNP	-	PNP	NPN	-	-
Current - Collector (Ic) (Max)	7 A	10 A	2 mA	-	30 A	500 mA	-	-
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	80 V	-	80 V	350 V	-	-
Vce Saturation (Max) @ Ib, Ic	2V @ 1.75A, 7A	3V @ 100mA, 10A	2V @ 1.75A, 7A	-	-	1V @ 5mA, 50mA	-	-
Current - Collector Cutoff (Max)	500µA	1mA	2mA	-	-	50nA (ICBO)	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 2.5A, 4V	1000 @ 5A, 3V	35 @ 500mA, 4V	-	-	20 @ 50mA, 10V	-	-
Power - Max	90 W	2 W	90 W	-	200 W	625 mW	-	-
Frequency - Transition	-	-	-	-	-	200MHz	-	-
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 200°C (TJ)	-	-	-55°C ~ 150°C (TJ)	-	-
Mounting Type	Through Hole	Through Hole	Through Hole	-	Through Hole	Through Hole	-	-
Package / Case	TO-213AA, TO-66-2	TO-220-3	TO-213AA, TO-66-2	-	TO-204AA, TO-3	TO-226-3, TO-92-3 Long Body	-	-
Supplier Device Package	-	TO-220AB	TO-66 (TO-213AA)	-	TO-3	TO-92 (TO-226)	-	-

Transistor Type:	PNP
Current - Collector (Ic) (Max):	7 A
Voltage - Collector Emitter Breakdown (Max):	60 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 1.75A, 7A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 2.5A, 4V
Power - Max:	90 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-213AA, TO-66-2
Supplier Device Package:	-

Microchip Technology 2N6317