Microchip Technology-2N6211 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N6211	2N6231	2N6212	2N6213	2N6251	2N6111
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Obsolete
Transistor Type	PNP	-	-	-	-	PNP
Current - Collector (Ic) (Max)	5 mA	-	-	-	-	7 A
Voltage - Collector Emitter Breakdown (Max)	225 V	-	-	-	-	30 V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 125mA, 1A	-	-	-	-	3.5V @ 3A, 7A
Current - Collector Cutoff (Max)	5mA	-	-	-	-	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 1A, 5V	-	-	-	-	30 @ 3A, 4V
Power - Max	3 W	-	-	-	-	40 W
Frequency - Transition	-	-	-	-	-	4MHz
Operating Temperature	-55°C ~ 200°C (TA)	-	-	-	-	150°C (TJ)
Mounting Type	Through Hole	-	-	-	-	Through Hole
Package / Case	TO-213AA, TO-66-2	-	-	-	-	TO-220-3
Supplier Device Package	TO-66 (TO-213AA)	-	-	-	-	TO-220

Transistor Type:	PNP
Current - Collector (Ic) (Max):	5 mA
Voltage - Collector Emitter Breakdown (Max):	225 V
Vce Saturation (Max) @ Ib, Ic:	1.4V @ 125mA, 1A
Current - Collector Cutoff (Max):	5mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 1A, 5V
Power - Max:	3 W
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 200°C (TA)
Mounting Type:	Through Hole
Package / Case:	TO-213AA, TO-66-2
Supplier Device Package:	TO-66 (TO-213AA)

Microchip Technology 2N6211