Microchip Technology-2N5682E3 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	10 µA
Voltage - Collector Emitter Breakdown (Max):	120 V
Vce Saturation (Max) @ Ib, Ic:	-
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 250mA, 2V
Power - Max:	1 W
Frequency - Transition:	30MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

Microchip Technology 2N5682E3