Microchip Technology-2N3019S - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	2N3019S	2N3019
Manufacturer	Microchip Technology	Solid State Inc.
Product Status	Active	Active
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	10µA (ICBO)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V	100 @ 150mA, 10V
Power - Max	800 mW	800 mW
Frequency - Transition	-	100MHz
Operating Temperature	-65°C ~ 200°C (TJ)	200°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39 (TO-205AD)	TO-39

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 10V
Power - Max:	800 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-39 (TO-205AD)

Microchip Technology 2N3019S