Microchip Technology-2N1480 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	55 V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 20mA, 200mA
Current - Collector Cutoff (Max):	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 200mA, 4V
Power - Max:	1 W
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

Microchip Technology 2N1480