1N6625
  • Share:

Microchip Technology 1N6625

Manufacturer No:
1N6625
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N6625 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.1KV 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:1 µA @ 1100 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$11.10
78

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N6625 1N6628   1N6626   1N6627   1N6629   1N6675   1N6620   1N6621   1N6622   1N6623  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Obsolete Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Schottky Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1100 V 600 V 220 V 440 V 880 V 20 V 220 V 440 V 600 V 880 V
Current - Average Rectified (Io) 1A 1.75A 1.75A 1.75A 1.4A 200mA 1.2A 1.2A 1.2A 1A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.35 V @ 2 A 1.4 V @ 1.4 A 500 mV @ 200 mA 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.55 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 45 ns 30 ns 30 ns 50 ns - 30 ns 30 ns 45 ns 50 ns
Current - Reverse Leakage @ Vr 1 µA @ 1100 V 2 µA @ 600 V 2 µA @ 220 V 2 µA @ 440 V 2 µA @ 880 V 10 µA @ 20 V 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 600 V 500 nA @ 880 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz - 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 50pF @ 0V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - A-PAK - - - DO-35 - - A-PAK -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 125°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

CDBA340-HF
CDBA340-HF
Comchip Technology
DIODE SCHOTTKY 40V 3A DO214AC
VS-E5PX6006L-N3
VS-E5PX6006L-N3
Vishay General Semiconductor - Diodes Division
60A, 600V, "X" SERIES FRED PT IN
SS1H10-E3/61T
SS1H10-E3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1A DO214AC
BAS116-7-F
BAS116-7-F
Diodes Incorporated
DIODE GEN PURP 85V 215MA SOT23-3
BYG10D-E3/TR
BYG10D-E3/TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 1.5A
AR1PD-M3/84A
AR1PD-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 1A DO220AA
P600D-E3/73
P600D-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 6A P600
VT5200-E3/4W
VT5200-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 5A 200V TO-220AC
VS-6FLR20S02
VS-6FLR20S02
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 6A DO203AA
VS-15ETX06PBF
VS-15ETX06PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO220AC
RJU3052SDPD-E0#J2
RJU3052SDPD-E0#J2
Renesas Electronics America Inc
DIODE GEN PURP 360V 20A TO252
S1JBHR5G
S1JBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA

Related Product By Brand

MP4KE300CAE3
MP4KE300CAE3
Microchip Technology
TVS DIODE 256VWM 414VC DO204AL
DSC1001CE2-074.2500T
DSC1001CE2-074.2500T
Microchip Technology
MEMS OSC XO 74.2500MHZ CMOS SMD
DSC6001MI1B-080.0000T
DSC6001MI1B-080.0000T
Microchip Technology
MEMS OSC AUTO LOWPWR -40C-85C
DM240013-2
DM240013-2
Microchip Technology
PIC24F K-SERIES 5V MICROSTICK
MCP4142T-104E/SN
MCP4142T-104E/SN
Microchip Technology
IC DGTL POT 100KOHM 129TAP 8SOIC
PIC32MX534F064H-V/MR
PIC32MX534F064H-V/MR
Microchip Technology
IC MCU 32BIT 64KB FLASH 64VQFN
PIC32MX775F256LT-80V/PT
PIC32MX775F256LT-80V/PT
Microchip Technology
IC MCU 32BIT 256KB FLASH 100TQFP
PIC16LC716T-04/SO
PIC16LC716T-04/SO
Microchip Technology
IC MCU 8BIT 3.5KB OTP 18SOIC
PIC16C765T-I/PT
PIC16C765T-I/PT
Microchip Technology
IC MCU 8BIT 14KB OTP 44TQFP
24LC256T-I/SN
24LC256T-I/SN
Microchip Technology
IC EEPROM 256KBIT I2C 8SOIC
MIC39500-2.5BU
MIC39500-2.5BU
Microchip Technology
IC REG LINEAR 2.5V 5A TO263-3
TC622EPA
TC622EPA
Microchip Technology
THERMOSTAT PROG ACTIVE HIGH 8DIP