1N6623US
  • Share:

Microchip Technology 1N6623US

Manufacturer No:
1N6623US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N6623US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 880V 1A A-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:500 nA @ 880 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:A-MELF
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$12.92
57

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N6623US 1N6643US   1N6663US   1N6626US   1N6627US   1N6625US   1N6628US   1N6624US   1N6629US   1N6620US   1N6621US   1N6622US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 50 V 600 V 220 V 440 V 1100 V 660 V 990 V 880 V 220 V 440 V 660 V
Current - Average Rectified (Io) 1A 300mA 500mA (DC) 1.75A 1.75A 1A 1.75A 1A 1.4A 1.2A 1.2A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 1 A 1.2 V @ 100 mA 1 V @ 400 mA 1.35 V @ 2 A 1.35 V @ 2 A 1.75 V @ 1 A 1.35 V @ 2 A 1.55 V @ 1 A 1.4 V @ 1.4 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 20 ns - 30 ns 30 ns 60 ns 30 ns 50 ns 50 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 880 V 50 nA @ 50 V 50 nA @ 600 V 2 µA @ 220 V 2 µA @ 440 V 1 µA @ 1100 V 2 µA @ 660 V 500 nA @ 990 V 2 µA @ 880 V 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 660 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 5pF @ 0V, 1MHz - 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, B SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package A-MELF D-5B D-5A A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BYS10-45HE3_A/H
BYS10-45HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 1A DO214AC
EGP20D
EGP20D
onsemi
DIODE GEN PURP 200V 2A DO15
NTE5902
NTE5902
NTE Electronics, Inc
R-500PRV 16A CATH CASE
FFPF08H60STU
FFPF08H60STU
onsemi
DIODE GEN PURP 600V 8A TO220F-2L
STTH1R04AY
STTH1R04AY
STMicroelectronics
DIODE GEN PURP 400V 1A SMA
GP10M-E3/54
GP10M-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
SS1FH10HM3/I
SS1FH10HM3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1A DO-219AB
1N5418/TR
1N5418/TR
Microchip Technology
RECTIFIER UFR,FRR
1N4937L-T
1N4937L-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
BYC15X-600,127
BYC15X-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 15A TO220F
ES2DHE3/52T
ES2DHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N5818HR1G
1N5818HR1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO204AL

Related Product By Brand

MP4KE22AE3
MP4KE22AE3
Microchip Technology
TVS DIODE 18.8VWM 30.6VC DO204AL
MPLAD30KP16CA
MPLAD30KP16CA
Microchip Technology
TVS DIODE 16VWM 27.2VC PLAD
MXLSMCJ58CAE3
MXLSMCJ58CAE3
Microchip Technology
TVS DIODE 58VWM 93.6VC DO214AB
MXSMCJ20AE3
MXSMCJ20AE3
Microchip Technology
TVS DIODE 20VWM 32.4VC DO214AB
DSC1001DI5-010.0000
DSC1001DI5-010.0000
Microchip Technology
MEMS OSC XO 10.0000MHZ CMOS SMD
EVB-LAN9252-SPI
EVB-LAN9252-SPI
Microchip Technology
EVAL BOARD FOR LAN9252
1N4135UR
1N4135UR
Microchip Technology
DIODE ZENER 100V 500MW DO213AA
DSPIC33FJ64GP206AT-I/PT
DSPIC33FJ64GP206AT-I/PT
Microchip Technology
IC MCU 16BIT 64KB FLASH 64TQFP
MCP2025-500E/MD
MCP2025-500E/MD
Microchip Technology
IC TRANSCEIVER HALF 1/1 8DFN
AT45DB161B-RI
AT45DB161B-RI
Microchip Technology
IC FLASH 16MBIT SPI 20MHZ 28SOIC
TC7107CPL
TC7107CPL
Microchip Technology
IC DRVR 7 SEG 3 1/2 DIGIT 40DIP
MIC4424YN
MIC4424YN
Microchip Technology
IC GATE DRVR LOW-SIDE 8DIP