1N6622US
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Microchip Technology 1N6622US

Manufacturer No:
1N6622US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N6622US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 660V 1.2A A-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):660 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 660 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:A-MELF
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number 1N6622US 1N6642US   1N6626US   1N6623US   1N6627US   1N6625US   1N6628US   1N6624US   1N6629US   1N6620US   1N6621US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 660 V 75 V 220 V 880 V 440 V 1100 V 660 V 990 V 880 V 220 V 440 V
Current - Average Rectified (Io) 1.2A 300mA 1.75A 1A 1.75A 1A 1.75A 1A 1.4A 1.2A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1.2 V @ 100 mA 1.35 V @ 2 A 1.55 V @ 1 A 1.35 V @ 2 A 1.75 V @ 1 A 1.35 V @ 2 A 1.55 V @ 1 A 1.4 V @ 1.4 A 1.4 V @ 1.2 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 5 ns 30 ns 50 ns 30 ns 60 ns 30 ns 50 ns 50 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 660 V 500 nA @ 75 V 2 µA @ 220 V 500 nA @ 880 V 2 µA @ 440 V 1 µA @ 1100 V 2 µA @ 660 V 500 nA @ 990 V 2 µA @ 880 V 500 nA @ 220 V 500 nA @ 440 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 5pF @ 0V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, D SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package A-MELF D-5D A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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