1N6621US
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Microchip Technology 1N6621US

Manufacturer No:
1N6621US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N6621US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 440V 1.2A A-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):440 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 440 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:A-MELF
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number 1N6621US 1N6622US   1N6626US   1N6623US   1N6627US   1N6625US   1N6628US   1N6631US   1N6624US   1N6629US   1N6620US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology
Product Status Active Active Active Active Active Active Active Active Discontinued at Digi-Key Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 440 V 660 V 220 V 880 V 440 V 1100 V 660 V 1100 V 990 V 880 V 220 V
Current - Average Rectified (Io) 1.2A 1.2A 1.75A 1A 1.75A 1A 1.75A 1.4A 1A 1.4A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1.4 V @ 1.2 A 1.35 V @ 2 A 1.55 V @ 1 A 1.35 V @ 2 A 1.75 V @ 1 A 1.35 V @ 2 A 1.4 V @ 1.4 A 1.55 V @ 1 A 1.4 V @ 1.4 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 50 ns 30 ns 60 ns 30 ns 60 ns 50 ns 50 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 440 V 500 nA @ 660 V 2 µA @ 220 V 500 nA @ 880 V 2 µA @ 440 V 1 µA @ 1100 V 2 µA @ 660 V 4 µA @ 1100 V 500 nA @ 990 V 2 µA @ 880 V 500 nA @ 220 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF A-MELF
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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