1N6621/TR
  • Share:

Microchip Technology 1N6621/TR

Manufacturer No:
1N6621/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
1N6621/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):440 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 440 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$12.72
26

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N6621/TR 1N6661/TR   1N6623/TR   1N6628/TR   1N6626/TR   1N6627/TR   1N6631/TR   1N6625/TR   1N6624/TR   1N6622/TR   1N6620/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 440 V 225 V 880 V 600 V 220 V 440 V 1.1 V 1.1 V 990 V 600 V 220 V
Current - Average Rectified (Io) 1.2A 500mA 1A 1.75A 1.75A 1.75A 1.4A 1A 1A 1.2A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1 V @ 400 mA 1.55 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.35 V @ 2 A 1.4 V @ 1.4 A 1.75 V @ 1 A 18 V @ 500 mA 1.4 V @ 1.2 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns - 50 ns 45 ns 30 ns 30 ns 60 ns 60 ns 60 ns 45 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 440 V 50 nA @ 225 V 500 nA @ 880 V 2 µA @ 600 V 2 µA @ 220 V 2 µA @ 440 V 4 µA @ 1.1 V 1 µA @ 1.1 V 500 nA @ 900 V 500 nA @ 600 V 500 nA @ 220 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz - 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - DO-35 (DO-204AH) - A-PAK - - - - A-PAK A-PAK -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

SK86L-TP
SK86L-TP
Micro Commercial Co
DIODE SCHOTTKY 60V 8A DO214AB
UF5400-E3/54
UF5400-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 3A DO201AD
BYV28-200-TR
BYV28-200-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 3.5A SOD64
PMEG4005ESFYL
PMEG4005ESFYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 0.5A SOD962
30CPF06
30CPF06
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO247AC
SF47GHR0G
SF47GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
GPA807H
GPA807H
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
HERA803G C0G
HERA803G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
SFF1002G C0G
SFF1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A ITO220AB
SFF506GHC0G
SFF506GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A ITO220AB
1N5391GHB0G
1N5391GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO204AC
MBRF760
MBRF760
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 7.5A ITO220AC

Related Product By Brand

MXLSMCJ24AE3
MXLSMCJ24AE3
Microchip Technology
TVS DIODE 24VWM 38.9VC DO214AB
DSC400-0202Q0108KE1T
DSC400-0202Q0108KE1T
Microchip Technology
MEMS OSC XO 2.25V-3.6V 20SMD
JANTX1N4979
JANTX1N4979
Microchip Technology
DIODE ZENER 75V 5W AXIAL
PIC16C662T-10/PQ
PIC16C662T-10/PQ
Microchip Technology
IC MCU 8BIT 7KB OTP 44MQFP
SY88927VZG
SY88927VZG
Microchip Technology
IC RECEIVER 0/1 8SOIC
93LC46T-I/SN
93LC46T-I/SN
Microchip Technology
IC EEPROM 1KBIT SPI 2MHZ 8SOIC
AT93C56W-10SC
AT93C56W-10SC
Microchip Technology
IC EEPROM 2KBIT SPI 2MHZ 8SOIC
MCP14A0452T-E/MS
MCP14A0452T-E/MS
Microchip Technology
IC GATE DRVR LOW-SIDE 8MSOP
MIC3230YTSE
MIC3230YTSE
Microchip Technology
IC LED DRIVER CTRLR PWM 16TSSOP
MCP1700T-2202E/TT
MCP1700T-2202E/TT
Microchip Technology
IC REG LINEAR 2.2V 200MA SOT23-3
TC1173-3.3VUATR
TC1173-3.3VUATR
Microchip Technology
IC REG LINEAR 3.3V 300MA 8MSOP
MICRF022YM-FS24-TR
MICRF022YM-FS24-TR
Microchip Technology
RF RX ASK/OOK 300-440MHZ 8SOIC