1N6621
  • Share:

Microchip Technology 1N6621

Manufacturer No:
1N6621
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N6621 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 440V 1.2A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):440 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 440 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$12.59
28

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N6621 1N6661   1N6623   1N6628   1N6626   1N6627   1N6625   1N6622   1N6629   1N6631   1N6620  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 440 V 225 V 880 V 600 V 220 V 440 V 1100 V 600 V 880 V 1100 V 220 V
Current - Average Rectified (Io) 1.2A 500mA 1A 1.75A 1.75A 1.75A 1A 1.2A 1.4A 1.4A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1 V @ 400 mA 1.55 V @ 1 A 1.35 V @ 2 A 1.35 V @ 2 A 1.35 V @ 2 A 1.75 V @ 1 A 1.4 V @ 1.2 A 1.4 V @ 1.4 A 1.4 V @ 1.4 A 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns - 50 ns 45 ns 30 ns 30 ns 60 ns 45 ns 50 ns 60 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 440 V 50 nA @ 225 V 500 nA @ 880 V 2 µA @ 600 V 2 µA @ 220 V 2 µA @ 440 V 1 µA @ 1100 V 500 nA @ 600 V 2 µA @ 880 V 4 µA @ 1100 V 500 nA @ 220 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz - 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz - 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - DO-35 (DO-204AH) - A-PAK - - - A-PAK - - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

V35PWM60-M3/I
V35PWM60-M3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 35A SLIMDPAK
VS-SD400N16PC
VS-SD400N16PC
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 400A DO205
RGP30D
RGP30D
NTE Electronics, Inc
R-200V 3A FAST SW
SS2H9-E3/5BT
SS2H9-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 2A DO214AA
HVM16
HVM16
Rectron USA
DIODE GEN PURP 16000V 350MA HVM
UF4007-M3/54
UF4007-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BY203-16STR
BY203-16STR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCH 1.2KV 250MA SOD57
GR2J-F1-0000HF
GR2J-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 2A DO214AA
RGP30DHE3/54
RGP30DHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO201AD
SRP100J-E3/54
SRP100J-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
RS1DL MHG
RS1DL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
SCS220KGC
SCS220KGC
Rohm Semiconductor
DIODE SCHOTTKY 1.2KV 20A TO220AC

Related Product By Brand

1N965B
1N965B
Microchip Technology
DIODE ZENER 15V 500MW DO7
JANS1N4471US
JANS1N4471US
Microchip Technology
DIODE ZENER 18V 1.5W D5A
DSPIC33FJ32GP202T-I/SS
DSPIC33FJ32GP202T-I/SS
Microchip Technology
IC MCU 16BIT 32KB FLASH 28SSOP
PIC16F84T-04/SO
PIC16F84T-04/SO
Microchip Technology
IC MCU 8BIT 1.75KB FLASH 18SOIC
PIC17C44-33/PT
PIC17C44-33/PT
Microchip Technology
IC MCU 8BIT 16KB OTP 44TQFP
PIC16C923T-08/PT
PIC16C923T-08/PT
Microchip Technology
IC MCU 8BIT 7KB OTP 64TQFP
KSZ8873RLLU
KSZ8873RLLU
Microchip Technology
IC TXRX PHY 10/100 3PORT 64LQFP
24CS512-I/SM
24CS512-I/SM
Microchip Technology
512K 3.4MHZ I2C SERIAL EEPROM
AT49BV040B-VU
AT49BV040B-VU
Microchip Technology
IC FLASH 4MBIT PARALLEL 32VSOP
MIC4127YMME-TR
MIC4127YMME-TR
Microchip Technology
IC GATE DRVR LOW-SIDE 8MSOP
SST12LP19E-QX8E
SST12LP19E-QX8E
Microchip Technology
IC AMP 802.11B/G/N 2.4GHZ 8XSON
ATSAMR21E16A-MUT
ATSAMR21E16A-MUT
Microchip Technology
IC RF TXRX+MCU ISM>1GHZ 32VQFN