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| Part Number | 1N5821US/TR | 1N5822US/TR | 1N5820US/TR |
|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active |
| Diode Type | Schottky | Schottky | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V | 40 V | 20 V |
| Current - Average Rectified (Io) | 3A | 3A | 3A |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A | 500 mV @ 3 A | 500 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | - | - |
| Current - Reverse Leakage @ Vr | 100 µA @ 30 V | 100 µA @ 40 V | 100 µA @ 20 V |
| Capacitance @ Vr, F | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SQ-MELF, B | SQ-MELF, B | SQ-MELF, B |
| Supplier Device Package | B, SQ-MELF | B, SQ-MELF | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 125°C | -65°C ~ 125°C | -65°C ~ 125°C |
