1N5809US
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Microchip Technology 1N5809US

Manufacturer No:
1N5809US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N5809US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 3A B-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N5809US 1N5802US   1N5804US   1N5806US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 50 V 100 V 150 V
Current - Average Rectified (Io) 3A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V 1 µA @ 50 V 1 µA @ 100 V 1 µA @ 150 V
Capacitance @ Vr, F 60pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package B, SQ-MELF D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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