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| Part Number | 1N5807/TR | 1N5802/TR | 1N5803/TR | 1N5804/TR | 1N5805/TR | 1N5806/TR |
|---|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microsemi Corporation |
| Product Status | Active | Active | Active | Active | Active | Active |
| Diode Type | Standard | Standard | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 50 V | 75 V | 100 V | 125 V | 150 V |
| Current - Average Rectified (Io) | 3A | 1A | 1A | 1A | 1A | 2.5A |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A | 875 mV @ 1 A | 875 mV @ 1 A | 875 mV @ 1 A | 875 mV @ 1 A | 875 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns | 25 ns | 25 ns | 25 ns | 25 ns | 25 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V | 1 µA @ 50 V | 1 µA @ 75 V | 1 µA @ 100 V | 1 µA @ 125 V | 1 µA @ 150 V |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | B, Axial | A, Axial | A, Axial | A, Axial | A, Axial | A, Axial |
| Supplier Device Package | - | - | - | - | - | A-PAK |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 125°C | -65°C ~ 175°C |
