1N5806US/TR
  • Share:

Microchip Technology 1N5806US/TR

Manufacturer No:
1N5806US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
1N5806US/TR Datasheet
ECAD Model:
-
Description:
UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 2.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:1 µA @ 150 V
Capacitance @ Vr, F:25pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$6.14
14

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N5806US/TR 1N5807US/TR   1N5809US/TR   1N5802US/TR   1N5804US/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 50 V 100 V 50 V 100 V
Current - Average Rectified (Io) 1A 3A 3A 1A 1A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 2.5 A 875 mV @ 4 A 875 mV @ 4 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 30 ns 30 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 1 µA @ 150 V 5 µA @ 50 V 5 µA @ 100 V 1 µA @ 50 V 1 µA @ 100 V
Capacitance @ Vr, F 25pF @ 10V, 1MHz 60pF @ 10V, 1MHz 60pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, B SQ-MELF, B SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A B, SQ-MELF B, SQ-MELF D-5A D-5A
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BYV29X-600,127
BYV29X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220FP
QH05TZ600
QH05TZ600
Power Integrations
DIODE GEN PURP 600V 5A TO220AC
CD1408-F1200
CD1408-F1200
Bourns Inc.
DIODE GEN PURP 200V 1A 1408
CDBC3200LR-HF
CDBC3200LR-HF
Comchip Technology
DIODE SCHOTTKY 200V 3A DO214AB
JANTX1N3070-1
JANTX1N3070-1
Microchip Technology
DIODE GEN PURP 175V 100MA DO7
CRS09(TE85L)
CRS09(TE85L)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1.5A SFLAT
S3AB M4G
S3AB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AA
SRAF10150 C0G
SRAF10150 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 10A ITO220AC
FR605GP-AP
FR605GP-AP
Micro Commercial Co
DIODE GPP FAST 6A R-6
HER204-AP
HER204-AP
Micro Commercial Co
DIODE GPP HE 2A DO-15
BAT46W-7-F-79
BAT46W-7-F-79
Diodes Incorporated
DIODE SCHOTTKY 100V 150MA SOD123
RBR1LAM30ATFTR
RBR1LAM30ATFTR
Rohm Semiconductor
AUTOMOTIVE SCHOTTKY BARRIER DIOD

Related Product By Brand

JAN1N5293UR-1/TR
JAN1N5293UR-1/TR
Microchip Technology
CURRENT REGULATOR
JAN1N4117C-1
JAN1N4117C-1
Microchip Technology
DIODE ZENER 25V DO35
JANTX1N3023C-1
JANTX1N3023C-1
Microchip Technology
DIODE ZENER 13V 1W DO41
JANTX1N3827CUR-1
JANTX1N3827CUR-1
Microchip Technology
DIODE ZENER 5.6V 1W DO213AB
LND01K1-G
LND01K1-G
Microchip Technology
MOSFET N-CH 9V 330MA SOT23-5
MCP4021T-202E/MSVAO
MCP4021T-202E/MSVAO
Microchip Technology
IC DGTL POT 2.1KOHM 64TAP 8MSOP
ATF1504AS-7JC44
ATF1504AS-7JC44
Microchip Technology
IC CPLD 64MC 7.5NS 44PLCC
PIC16LF1936-E/SS
PIC16LF1936-E/SS
Microchip Technology
IC MCU 8BIT 14KB FLASH 28SSOP
ATTINY861-15SZ
ATTINY861-15SZ
Microchip Technology
IC MCU 8BIT 8KB FLASH 20SOIC
AT45D081-RC
AT45D081-RC
Microchip Technology
IC FLASH 8MBIT SPI 10MHZ 28SOIC
MIC4680-2.5BM TR
MIC4680-2.5BM TR
Microchip Technology
IC REG BUCK 2.5V 1.3A 8SOIC
MIC5371-JCYMT TR
MIC5371-JCYMT TR
Microchip Technology
IC REG LINEAR 150MA/150MA 6TMLF