1N5802US
  • Share:

Microchip Technology 1N5802US

Manufacturer No:
1N5802US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N5802US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 50V 1A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:1 µA @ 50 V
Capacitance @ Vr, F:25pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$9.13
32

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N5802US 1N5806US   1N5809US   1N5804US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 150 V 100 V 100 V
Current - Average Rectified (Io) 1A 1A 3A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 4 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 30 ns 25 ns
Current - Reverse Leakage @ Vr 1 µA @ 50 V 1 µA @ 150 V 5 µA @ 100 V 1 µA @ 100 V
Capacitance @ Vr, F 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz 60pF @ 10V, 1MHz 25pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, B SQ-MELF, A
Supplier Device Package D-5A D-5A B, SQ-MELF D-5A
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MSRF860G
MSRF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1N5395G
1N5395G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO204AC
ESH1PCHM3/84A
ESH1PCHM3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO220AA
S5GHM3/57T
S5GHM3/57T
Vishay General Semiconductor - Diodes Division
DIODE GP 400V 5A DO214AB
CDBC3100LR-HF
CDBC3100LR-HF
Comchip Technology
DIODE SCHOTTKY 100V 3A DO214AB
SDT10H50P5-7D
SDT10H50P5-7D
Diodes Incorporated
SCHOTTKY RECTIFIER PDI5 T&R 1.5K
SDUR2060
SDUR2060
SMC Diode Solutions
DIODE GEN PURP 600V 20A TO220AC
SSL34A-F1-0000HF
SSL34A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 3A DO214AC
IDP30E60
IDP30E60
Infineon Technologies
IDP30E60 - SILICON POWER DIODE
SF2007PTHC0G
SF2007PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 20A TO247AD
RB721Q-40T-72
RB721Q-40T-72
Rohm Semiconductor
DIODE SCHOTTKY 40V 30MA DO34
RBR3L30BTE25
RBR3L30BTE25
Rohm Semiconductor
DIODE SCHOTTKY 30V 3A PMDS

Related Product By Brand

DSC1001BE1-060.0000T
DSC1001BE1-060.0000T
Microchip Technology
MEMS OSC XO 60.0000MHZ CMOS SMD
DSC1001BI2-016.3840T
DSC1001BI2-016.3840T
Microchip Technology
MEMS OSC XO 16.3840MHZ CMOS SMD
DSC1121CI5-040.0000T
DSC1121CI5-040.0000T
Microchip Technology
MEMS OSC XO 40.0000MHZ CMOS SMD
DSC1121DE2-025.0000T
DSC1121DE2-025.0000T
Microchip Technology
MEMS OSC XO 25.0000MHZ CMOS SMD
DSC1101CE1-024.5760T
DSC1101CE1-024.5760T
Microchip Technology
MEMS OSC LOW POWER LVCMOS 20C-7
1PMT5932A/TR7
1PMT5932A/TR7
Microchip Technology
DIODE ZENER 20V 3W DO216AA
PIC16F18857-E/SS
PIC16F18857-E/SS
Microchip Technology
IC MCU 8BIT 56KB FLASH 28SSOP
DSPIC30F6012AT-30I/PT
DSPIC30F6012AT-30I/PT
Microchip Technology
IC MCU 16BIT 144KB FLASH 64TQFP
AT45DB011B-SC
AT45DB011B-SC
Microchip Technology
IC FLASH 1MBIT SPI 20MHZ 8SOIC
MCP111T-300E/TT
MCP111T-300E/TT
Microchip Technology
IC SUPERVISOR 1 CHANNEL SOT23-3
MIC5203-4.7BM5 TR
MIC5203-4.7BM5 TR
Microchip Technology
MICRO CAP 80 MA LOW-DROPOUT REG
ATECC608A-SSHDA-B
ATECC608A-SSHDA-B
Microchip Technology
IC AUTHENTICATION CHIP 8SOIC