Microchip Technology-1N5622US - Diodes - Rectifiers - Single Product Specifications and Latest Quotes

Part Number	1N5622US	1N5623US	1N5620US	1N5621US
Manufacturer	Microchip Technology	Microchip Technology	Microchip Technology	Microchip Technology
Product Status	Active	Active	Active	Active
Diode Type	Standard	Standard	Standard	Standard
Voltage - DC Reverse (Vr) (Max)	1000 V	1000 V	800 V	800 V
Current - Average Rectified (Io)	1A	1A	1A	1A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 3 A	1.6 V @ 3 A	1.3 V @ 3 A	1.6 V @ 3 A
Speed	Standard Recovery >500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Standard Recovery >500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	2 µs	500 ns	2 µs	300 ns
Current - Reverse Leakage @ Vr	500 nA @ 1000 V	500 nA @ 1000 V	500 nA @ 800 V	500 nA @ 800 V
Capacitance @ Vr, F	-	15pF @ 12V, 1MHz	-	20pF @ 12V, 1MHz
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SQ-MELF, A	SQ-MELF, A	SQ-MELF, A	SQ-MELF, A
Supplier Device Package	D-5A	D-5A	D-5A	D-5A
Operating Temperature - Junction	-65°C ~ 200°C	-65°C ~ 175°C	-65°C ~ 200°C	-65°C ~ 175°C

Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1000 V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.3 V @ 3 A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2 µs
Current - Reverse Leakage @ Vr:	500 nA @ 1000 V
Capacitance @ Vr, F:	-
Mounting Type:	Surface Mount
Package / Case:	SQ-MELF, A
Supplier Device Package:	D-5A
Operating Temperature - Junction:	-65°C ~ 200°C

Microchip Technology 1N5622US