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| Part Number | 1N5617E3/TR | 1N5619E3/TR | 1N5417E3/TR |
|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active |
| Diode Type | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 600 V | 200 V |
| Current - Average Rectified (Io) | 1A | 1A | 3A |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 3 A | 1.6 V @ 3 A | 1.5 V @ 9 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | - | 150 ns |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V | 500 µA @ 400 V | - |
| Capacitance @ Vr, F | 35pF @ 12V, 1MHz | 25pF @ 12V, 1MHz | - |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | A, Axial | A, Axial | B, Axial |
| Supplier Device Package | A, Axial | A, Axial | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C |
