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| Part Number | 1N5617 | 1N5618 | 1N5619 | 1N5627 | 1N5417 | 1N5614 | 1N5615 | 1N5616 |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | NTE Electronics, Inc | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Active | Active | Active | Active |
| Diode Type | Standard | Standard | Standard | Standard | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 600 V | 600 V | 800 V | 200 V | 200 V | 200 V | 400 V |
| Current - Average Rectified (Io) | 1A | 1A | 1A | 3A | 3A | 1A | 1A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A | 1.3 V @ 3 A | 1.6 V @ 3 A | 1 V @ 3 A | 1.5 V @ 9 A | 1.3 V @ 3 A | 1.6 V @ 3 A | 1.3 V @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | 2 µs | 250 ns | - | 150 ns | 2 µs | 150 ns | 2 µs |
| Current - Reverse Leakage @ Vr | 500 nA @ 400 V | 500 nA @ 600 V | 500 nA @ 600 V | 5 µA @ 800 V | 1 µA @ 200 V | 500 nA @ 200 V | 500 nA @ 200 V | 500 nA @ 400 V |
| Capacitance @ Vr, F | 35pF @ 12V, 1MHz | - | 25pF @ 12V, 1MHz | 40pF @ 4V, 1MHz | - | - | 45pF @ 12V, 1MHz | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | A, Axial | A, Axial | A, Axial | SOD-64, Axial | Axial | A, Axial | A, Axial | A, Axial |
| Supplier Device Package | - | - | - | SOD-64 | B, Axial | - | - | - |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 200°C |
