1N5553US
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Microchip Technology 1N5553US

Manufacturer No:
1N5553US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N5553US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 800V 3A B-MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 9 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:1 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N5553US 1N5554US   1N5550US   1N5551US   1N5552US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 1000 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 9 A 1.2 V @ 9 A 1.2 V @ 9 A 1.2 V @ 9 A 1.2 V @ 9 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 1 µA @ 800 V 1 µA @ 1000 V 1 µA @ 200 V 1 µA @ 400 V 1 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, B SQ-MELF, B SQ-MELF, B SQ-MELF, B
Supplier Device Package B, SQ-MELF B, SQ-MELF D-5B D-5B D-5B
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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