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| Part Number | 1N5417 | 1N5418 | 1N5617 | 1N5419 | 1N5407 | 1N5415 | 1N5416 |
|---|---|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | NTE Electronics, Inc | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Active | Active | Active |
| Diode Type | Standard | Standard | Standard | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 400 V | 400 V | 500 V | 800 V | 50 V | 100 V |
| Current - Average Rectified (Io) | 3A | 3A | 1A | 3A | 3A | 3A | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A | 1.5 V @ 9 A | 1.6 V @ 3 A | 1.5 V @ 9 A | 1 V @ 3 A | 1.5 V @ 9 A | 1.5 V @ 9 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | 150 ns | 150 ns | 250 ns | - | 150 ns | 150 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V | 1 µA @ 400 V | 500 nA @ 400 V | 1 µA @ 500 V | 10 µA @ 800 V | 1 µA @ 50 V | 1 µA @ 100 V |
| Capacitance @ Vr, F | - | - | 35pF @ 12V, 1MHz | - | - | - | - |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount | Through Hole | Through Hole | Through Hole |
| Package / Case | Axial | SQ-MELF, B | A, Axial | SQ-MELF, B | DO-201AA, DO-27, Axial | B, Axial | B, Axial |
| Supplier Device Package | B, Axial | B, SQ-MELF | - | B, SQ-MELF | Axial | - | - |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 170°C | -65°C ~ 175°C | -65°C ~ 175°C |
