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| Part Number | 1N5416US | 1N5616US | 1N5417US | 1N5418US |
|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active |
| Diode Type | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 400 V | 200 V | 400 V |
| Current - Average Rectified (Io) | 3A | 1A | 3A | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A | 1.3 V @ 3 A | 1.5 V @ 9 A | 1.5 V @ 9 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | 2 µs | 150 ns | 150 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V | 500 nA @ 400 V | 1 µA @ 200 V | 1 µA @ 400 V |
| Capacitance @ Vr, F | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | E-MELF | SQ-MELF, A | E-MELF | E-MELF |
| Supplier Device Package | D-5B | D-5A | D-5B | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 175°C |
