1N5186US
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Microchip Technology 1N5186US

Manufacturer No:
1N5186US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
1N5186US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 100V 3A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 9 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:2 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number 1N5186US 1N5187US   1N5188US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 400 V
Current - Average Rectified (Io) 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 200 ns 250 ns
Current - Reverse Leakage @ Vr 2 µA @ 100 V 2 µA @ 200 V 2 µA @ 400 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case B, Axial B, Axial B, Axial
Supplier Device Package - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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