Littelfuse Inc.-LSIC1MO170E1000 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V, 20V
Rds On (Max) @ Id, Vgs:	1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 20 V
Vgs (Max):	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:	200 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	54W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247AD
Package / Case:	TO-247-3

Littelfuse Inc. LSIC1MO170E1000