Littelfuse Inc.-LSIC1MO120G0025 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	32mOhm @ 50A, 20V
Vgs(th) (Max) @ Id:	4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs:	265 nC @ 20 V
Vgs (Max):	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:	495 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	500W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4

Littelfuse Inc. LSIC1MO120G0025