W6672TJ350
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IXYS W6672TJ350

Manufacturer No:
W6672TJ350
Manufacturer:
IXYS
Package:
Box
Datasheet:
W6672TJ350 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.9KV 6672A -
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1900 V
Current - Average Rectified (Io):6672A
Voltage - Forward (Vf) (Max) @ If:1.37 V @ 5000 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):52 µs
Current - Reverse Leakage @ Vr:100 mA @ 1900 V
Capacitance @ Vr, F:- 
Mounting Type:Chassis Mount
Package / Case:TO-200AF
Supplier Device Package:- 
Operating Temperature - Junction:-40°C ~ 160°C
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$422.33
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Similar Products

Part Number W6672TJ350 W6672TE350   W6672TJ320  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1900 V 1900 V 1750 V
Current - Average Rectified (Io) 6672A 6672A 6672A
Voltage - Forward (Vf) (Max) @ If 1.37 V @ 5000 A 1.37 V @ 5000 A 1.37 V @ 5000 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 52 µs 52 µs 52 µs
Current - Reverse Leakage @ Vr 100 mA @ 1900 V 100 mA @ 1900 V 100 mA @ 1750 V
Capacitance @ Vr, F - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Package / Case TO-200AF TO-200AF TO-200AF
Supplier Device Package - - -
Operating Temperature - Junction -40°C ~ 160°C -40°C ~ 160°C -40°C ~ 160°C

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