VUO50-16NO3
  • Share:

IXYS VUO50-16NO3

Manufacturer No:
VUO50-16NO3
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
VUO50-16NO3 Datasheet
ECAD Model:
-
Description:
BRIDGE RECT 3P 1.6KV 58A FO-F-B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Three Phase
Technology:Standard
Voltage - Peak Reverse (Max):1.6 kV
Current - Average Rectified (Io):58 A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 150 A
Current - Reverse Leakage @ Vr:300 µA @ 1600 V
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Chassis Mount
Package / Case:FO-F-B
Supplier Device Package:FO-F-B
0 Remaining View Similar

In Stock

-
91

Please send RFQ , we will respond immediately.

Similar Products

Part Number VUO50-16NO3 VUO30-16NO3   VUO50-12NO3   VUO50-14NO3  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
Diode Type Three Phase Three Phase Three Phase Three Phase
Technology Standard Standard Standard Standard
Voltage - Peak Reverse (Max) 1.6 kV 1.6 kV 1.2 kV 1.4 kV
Current - Average Rectified (Io) 58 A 37 A 58 A 58 A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 150 A 2.55 V @ 150 A 1.9 V @ 150 A 1.9 V @ 150 A
Current - Reverse Leakage @ Vr 300 µA @ 1600 V 300 µA @ 1600 V 300 µA @ 1200 V 300 µA @ 1400 V
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case FO-F-B FO-F-B FO-F-B FO-F-B
Supplier Device Package FO-F-B FO-F-B FO-F-B FO-F-B

Related Product By Categories

NTE5390
NTE5390
NTE Electronics, Inc
R-SI BRIDGE 200V 35A
VS-110MT160KPBF
VS-110MT160KPBF
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.6KV 110A MT-K
VS-100MT160PAPBF
VS-100MT160PAPBF
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.6KV 100A 7MTPB
MSCDC200H120AG
MSCDC200H120AG
Microchip Technology
PM-DIODE-SIC-SBD-SP6C
DF005S-E3/45
DF005S-E3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 50V 1A DFS
BU1508-E3/51
BU1508-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 800V 3.4A BU
GHXS030A120S-D1E
GHXS030A120S-D1E
SemiQ
BRIDGE RECT 1P 1.2KV 30A SOT227
GBPC1210W-E4/51
GBPC1210W-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 1KV 12A GBPC-W
2RS105M
2RS105M
Rectron USA
BRIDGE RECT 600V 2A RS-1M
KBJ810-B1-0000
KBJ810-B1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 8A 4KBJ
TS15P06GHC2G
TS15P06GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 15A TS-6P
CBR1U-D010S
CBR1U-D010S
Central Semiconductor Corp
BRIDGE RECT 1P 100V 1A 4SMDIP

Related Product By Brand

DSS2X200-0008D
DSS2X200-0008D
IXYS
DIODE MODULE 8V 200A SOT227B
IXFK26N120P
IXFK26N120P
IXYS
MOSFET N-CH 1200V 26A TO264AA
IXTC26N50P
IXTC26N50P
IXYS
MOSFET N-CH 500V 15A ISOPLUS220
IXTV18N60P
IXTV18N60P
IXYS
MOSFET N-CH 600V 18A PLUS220
IXFX44N55Q
IXFX44N55Q
IXYS
MOSFET N-CH 550V 44A PLUS247-3
IXFH6N100F
IXFH6N100F
IXYS
MOSFET N-CH 1000V 6A TO247
IXYH60N90C3
IXYH60N90C3
IXYS
IGBT 900V 140A 750W C3 TO-247
IXXH80N65B4
IXXH80N65B4
IXYS
IGBT 650V 160A 625W TO247AD
IXGA12N120A3-TRL
IXGA12N120A3-TRL
IXYS
IXGA12N120A3 TRL
IXGP50N33TBM-A
IXGP50N33TBM-A
IXYS
IGBT 330V 30A 50W TO220AB
IXGQ150N30TCD1
IXGQ150N30TCD1
IXYS
IGBT 300V 150A TO3P
IXBF12N300
IXBF12N300
IXYS
IGBT 3000V 26A 125W ISOPLUSI4