VUO160-18NO7
  • Share:

IXYS VUO160-18NO7

Manufacturer No:
VUO160-18NO7
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
VUO160-18NO7 Datasheet
ECAD Model:
-
Description:
BRIDGE RECT 3P 1.8KV 175A PWS-E1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Three Phase
Technology:Standard
Voltage - Peak Reverse (Max):1.8 kV
Current - Average Rectified (Io):175 A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 60 A
Current - Reverse Leakage @ Vr:200 µA @ 1800 V
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:PWS-E
Supplier Device Package:PWS-E
0 Remaining View Similar

In Stock

$70.72
5

Please send RFQ , we will respond immediately.

Similar Products

Part Number VUO160-18NO7 VUO190-18NO7   VUO110-18NO7   VUO160-08NO7   VUO160-12NO7   VUO160-14NO7   VUO160-16NO7  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active Obsolete Active
Diode Type Three Phase Three Phase Three Phase Three Phase Three Phase Three Phase Three Phase
Technology Standard Standard Standard Standard Standard Standard Standard
Voltage - Peak Reverse (Max) 1.8 kV 1.8 kV 1.8 kV 800 V 1.2 kV 1.4 kV 1.6 kV
Current - Average Rectified (Io) 175 A 248 A 127 A 175 A 175 A 175 A 175 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 60 A 1.07 V @ 80 A 1.13 V @ 50 A 1.1 V @ 60 A 1.1 V @ 60 A 1.1 V @ 60 A 1.1 V @ 60 A
Current - Reverse Leakage @ Vr 200 µA @ 1800 V 200 µA @ 1800 V 100 µA @ 1800 V 200 µA @ 800 V 200 µA @ 1200 V 200 µA @ 1400 V 200 µA @ 1600 V
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case PWS-E PWS-E PWS-E PWS-E PWS-E PWS-E PWS-E
Supplier Device Package PWS-E PWS-E PWS-E PWS-E PWS-E PWS-E PWS-E

Related Product By Categories

GBPC1006W
GBPC1006W
SURGE
10A -600V - GBPC-W - BRIDGE
GBJ2008-F
GBJ2008-F
Diodes Incorporated
BRIDGE RECT 1PHASE 800V 20A GBJ
GBU6D-E3/51
GBU6D-E3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 3.8A GBU
MBS10
MBS10
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 800MA MBS
DB101S-G
DB101S-G
Comchip Technology
BRIDGE RECT 1PHASE 50V 1A DBS
VS-GBPC3502A
VS-GBPC3502A
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 200V 35A GBPC-A
GBU407H
GBU407H
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 4A GBU
FUS45-0045B
FUS45-0045B
IXYS
BRIDGE RECT 3P 45V 45A I4-PAC
PBU1007
PBU1007
Diodes Incorporated
BRIDGE RECT 1PHASE 1KV 10A PBU
SC35VB80-G
SC35VB80-G
Comchip Technology
BRIDGE RECT 3PHASE 800V 35A SCVB
3N258-E4/51
3N258-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 2A KBPM
GBPC4001M T0G
GBPC4001M T0G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 100V 40A GBPC40-M

Related Product By Brand

DPG80C400HB
DPG80C400HB
IXYS
DIODE ARRAY GP 400V 40A TO247AD
DPF60C300HB
DPF60C300HB
IXYS
DIODE ARRAY GP 300V 30A TO247AD
DSSK60-02AR
DSSK60-02AR
IXYS
DIODE ARRAY SCHOTTKY 200V 30A
DSEI8-06AS-TUB
DSEI8-06AS-TUB
IXYS
DIODE GEN PURP 600V 8A TO263AB
IXFX64N60Q3
IXFX64N60Q3
IXYS
MOSFET N-CH 600V 64A PLUS247-3
IXTY26P10T
IXTY26P10T
IXYS
MOSFET P-CH 100V 26A TO252
IXFR80N20Q
IXFR80N20Q
IXYS
MOSFET N-CH 200V 71A ISOPLUS247
IXTY24N15T
IXTY24N15T
IXYS
MOSFET N-CH 150V 24A TO252
IXFT18N90P
IXFT18N90P
IXYS
MOSFET N-CH 900V 18A TO268
IXTA15P15T
IXTA15P15T
IXYS
MOSFET P-CH 150V 15A TO263
IXGH15N120CD1
IXGH15N120CD1
IXYS
IGBT 1200V 30A 150W TO247
IXGP10N60A
IXGP10N60A
IXYS
IGBT 600V 20A 100W TO220AB