IXYS-MMIX1Y100N120C3H1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	92 A
Current - Collector Pulsed (Icm):	440 A
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 100A
Power - Max:	400 W
Switching Energy:	6.5mJ (on), 2.9mJ (off)
Input Type:	Standard
Gate Charge:	270 nC
Td (on/off) @ 25°C:	48ns/123ns
Test Condition:	600V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr):	420 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	24-PowerSMD, 21 Leads
Supplier Device Package:	24-SMPD

IXYS MMIX1Y100N120C3H1