IXYS-MII75-12A3 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	90 A
Power - Max:	370 W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 50A
Current - Collector Cutoff (Max):	4 mA
Input Capacitance (Cies) @ Vce:	3.3 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Y4-M5
Supplier Device Package:	Y4-M5

IXYS MII75-12A3