IXYS-MII100-12A3 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	135 A
Power - Max:	560 W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 75A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	5.5 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Y4-M5
Supplier Device Package:	Y4-M5

IXYS MII100-12A3