IXYS-MIEB101H1200EH - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	183 A
Power - Max:	630 W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 100A
Current - Collector Cutoff (Max):	300 µA
Input Capacitance (Cies) @ Vce:	7.43 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	E3
Supplier Device Package:	E3

IXYS MIEB101H1200EH