IXYS-MID200-12A4 - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	270 A
Power - Max:	1130 W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 150A
Current - Collector Cutoff (Max):	10 mA
Input Capacitance (Cies) @ Vce:	11 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Y3-DCB
Supplier Device Package:	Y3-DCB

IXYS MID200-12A4