IXYX110N120A4
  • Share:

IXYS IXYX110N120A4

Manufacturer No:
IXYX110N120A4
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYX110N120A4 Datasheet
ECAD Model:
-
Description:
IGBT 1200V 110A GNX4 XPT PLUS247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):375 A
Current - Collector Pulsed (Icm):900 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 110A
Power - Max:1360 W
Switching Energy:2.5mJ (on), 8.4mJ (off)
Input Type:Standard
Gate Charge:305 nC
Td (on/off) @ 25°C:42ns/550ns
Test Condition:600V, 50A, 1.5Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 (IXTH)
0 Remaining View Similar

In Stock

$36.78
22

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYX110N120A4 IXYX140N120A4   IXYX110N120B4   IXYX110N120C4   IXYK110N120A4   IXYN110N120A4  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active Active
IGBT Type PT PT - - PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 375 A 480 A 340 A 310 A 375 A 275 A
Current - Collector Pulsed (Icm) 900 A 1200 A 800 A 740 A 900 A 950 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 110A 1.7V @ 15V, 140A 2.1V @ 15V, 110A 2.4V @ 15V, 110A 1.8V @ 15V, 110A 1.8V @ 15V, 110A
Power - Max 1360 W 1500 W 1360 W 1360 W 1360 W 830 W
Switching Energy 2.5mJ (on), 8.4mJ (off) 4.9mJ (on), 12mJ (off) 3.6mJ (on), 3.85mJ (off) 3.6mJ (on), 1.9mJ (off) 2.5mJ (on), 8.4mJ (off) 2.5mJ (on), 8.4mJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 305 nC 420 nC 340 nC 330 nC 305 nC 305 nC
Td (on/off) @ 25°C 42ns/550ns 52ns/590ns 45ns/390ns 40ns/320ns 42ns/550ns 42ns/550ns
Test Condition 600V, 50A, 1.5Ohm, 15V 600V, 70A, 1.5Ohm, 15V 600V, 50A, 2Ohm, 15V 600V, 50A, 2Ohm, 15V 600V, 50A, 1.5Ohm, 15V 600V, 50A, 2Ohm, 15V
Reverse Recovery Time (trr) - 47 ns 50 ns 48 ns - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Chassis Mount
Package / Case TO-247-3 TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant TO-264-3, TO-264AA SOT-227-4, miniBLOC
Supplier Device Package TO-247 (IXTH) PLUS247™-3 PLUS247™-3 PLUS247™-3 TO-264 (IXYK) SOT-227B

Related Product By Categories

MGP15N60U
MGP15N60U
onsemi
IGBT, 26A, 600V, N-CHANNEL
STGFW20H65FB
STGFW20H65FB
STMicroelectronics
IGBT 650V 40A 52W TO3PF
FGD3325G2-F085
FGD3325G2-F085
onsemi
IGBT 300V DPAK
STGB18N40LZT4
STGB18N40LZT4
STMicroelectronics
IGBT 420V 30A 150W D2PAK
AIKB20N60CTATMA1
AIKB20N60CTATMA1
Infineon Technologies
IC DISCRETE 600V TO263-3
IRG4BC10SD
IRG4BC10SD
Infineon Technologies
IGBT 600V 14A 38W TO220AB
IXGA7N60C
IXGA7N60C
IXYS
IGBT 600V 14A 54W TO263
IXGP15N100C
IXGP15N100C
IXYS
IGBT 1000V 30A 150W TO220AB
IXGK64N60B3D1
IXGK64N60B3D1
IXYS
IGBT 600V 460W TO264
SKB06N60ATMA1
SKB06N60ATMA1
Infineon Technologies
IGBT 600V 12A 68W TO263-3-2
IRGP4062D-EPBF
IRGP4062D-EPBF
Infineon Technologies
IGBT 600V 48A 250W TO247AD
NGTB10N60FG
NGTB10N60FG
onsemi
IGBT 600V 10A TO220F3

Related Product By Brand

VUO34-16NO1
VUO34-16NO1
IXYS
BRIDGE RECT 3P 1.6KV 36A V1-A
DSEE8-08CC
DSEE8-08CC
IXYS
DIODE ARRAY 800V 10A ISOPLUS220
DSI30-12AS-TRL
DSI30-12AS-TRL
IXYS
DIODE GEN PURP 1.2KV 30A TO263
DNA30EM2200PZ-TUB
DNA30EM2200PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
IXFN170N30P
IXFN170N30P
IXYS
MOSFET N-CH 300V 138A SOT-227B
IXFR20N120P
IXFR20N120P
IXYS
MOSFET N-CH 1200V 13A ISOPLUS247
IXTU1R4N60P
IXTU1R4N60P
IXYS
MOSFET N-CH 600V 1.4A TO251
IXTV230N085T
IXTV230N085T
IXYS
MOSFET N-CH 85V 230A PLUS220
IXTC75N10
IXTC75N10
IXYS
MOSFET N-CH 100V 72A ISOPLUS220
IXYT30N65C3H1HV
IXYT30N65C3H1HV
IXYS
IGBT 650V 60A 270W TO268HV
IXGP30N60C3D4
IXGP30N60C3D4
IXYS
IGBT 600V 60A 220W TO220AB
IXBD4411PI
IXBD4411PI
IXYS
IC GATE DRVR HIGH-SIDE 16DIP