IXYS-IXYT30N65C3H1HV - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	118 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 30A
Power - Max:	270 W
Switching Energy:	1mJ (on), 270µJ (off)
Input Type:	Standard
Gate Charge:	44 nC
Td (on/off) @ 25°C:	21ns/75ns
Test Condition:	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):	120 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268AA

IXYS IXYT30N65C3H1HV