IXYP10N65C3D1
  • Share:

IXYS IXYP10N65C3D1

Manufacturer No:
IXYP10N65C3D1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYP10N65C3D1 Datasheet
ECAD Model:
-
Description:
IGBT 650V 30A 160W TO-220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):54 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 10A
Power - Max:160 W
Switching Energy:240µJ (on), 110µJ (off)
Input Type:Standard
Gate Charge:18 nC
Td (on/off) @ 25°C:20ns/77ns
Test Condition:400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr):170 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$2.51
44

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYP10N65C3D1 IXYP20N65C3D1   IXYP10N65C3D1M   IXYP15N65C3D1   IXYP10N65B3D1  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active
IGBT Type PT PT - PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 30 A 50 A 15 A 38 A 32 A
Current - Collector Pulsed (Icm) 54 A 105 A 50 A 80 A 62 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A 2.5V @ 15V, 20A 2.6V @ 15V, 10A 2.5V @ 15V, 15A 1.95V @ 15V, 10A
Power - Max 160 W 200 W 53 W 200 W 160 W
Switching Energy 240µJ (on), 110µJ (off) 430µJ (on), 350µJ (off) 240µJ (on), 170µJ (off) 270µJ (on), 230µJ (off) 300µJ (on), 200µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 18 nC 30 nC 18 nC 19 nC 20 nC
Td (on/off) @ 25°C 20ns/77ns 19ns/80ns 20ns/77ns 15ns/68ns 17ns/125ns
Test Condition 400V, 10A, 50Ohm, 15V 400V, 20A, 20Ohm, 15V 400V, 10A, 50Ohm, 15V 400V, 15A, 20Ohm, 15V 400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr) 170 ns 135 ns 26 ns 110 ns 29 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220-3 TO-220 Isolated Tab TO-220-3 TO-220

Related Product By Categories

HGTG20N60B3D
HGTG20N60B3D
onsemi
IGBT 600V 40A 165W TO247
IXYH40N90C3D1
IXYH40N90C3D1
IXYS
IGBT 900V 90A 500W TO247
FGD3N60LSDTM
FGD3N60LSDTM
onsemi
IGBT 600V 6A 40W DPAK
ILB03N60
ILB03N60
Infineon Technologies
IGBT, 4.5A, 600V, N-CHANNEL
IKW40N65RH5XKSA1
IKW40N65RH5XKSA1
Infineon Technologies
INDUSTRY 14
IRG4IBC30SPBF
IRG4IBC30SPBF
Infineon Technologies
IGBT 600V 23.5A 45W TO220FP
IRGP4065DPBF
IRGP4065DPBF
Infineon Technologies
IGBT 300V 70A 160W TO247AC
STGD8NC60KT4
STGD8NC60KT4
STMicroelectronics
IGBT 600V 15A 62W DPAK
FGP5N60UFDTU
FGP5N60UFDTU
onsemi
IGBT 600V 10A 81W TO220
IHP10T120
IHP10T120
Infineon Technologies
IGBT 1200V 16A 138W TO220-3
IXXK160N65C4
IXXK160N65C4
IXYS
IGBT 650V 290A 940W TO264

Related Product By Brand

DMA40U1800GU
DMA40U1800GU
IXYS
POWER DIODE DISCRETES-RECTIFIER
DSSK60-015A
DSSK60-015A
IXYS
DIODE ARRAY SCHOTTKY 150V TO247
IXFP72N20X3
IXFP72N20X3
IXYS
MOSFET N-CH 200V 72A TO220
IXFN230N20T
IXFN230N20T
IXYS
MOSFET N-CH 200V 220A SOT227B
IXTX200N10L2
IXTX200N10L2
IXYS
MOSFET N-CH 100V 200A PLUS247-3
IXFX66N85X
IXFX66N85X
IXYS
MOSFET N-CH 850V 66A PLUS247-3
IXTA1N120P-TRL
IXTA1N120P-TRL
IXYS
MOSFET N-CH 1200V 1A TO263
IXTA300N04T2
IXTA300N04T2
IXYS
MOSFET N-CH 40V 300A TO263
IXFR180N06
IXFR180N06
IXYS
MOSFET N-CH 60V 180A ISOPLUS247
IXFB170N30P
IXFB170N30P
IXYS
MOSFET N-CH 300V 170A PLUS264
IXFK210N17T
IXFK210N17T
IXYS
MOSFET N-CH 170V 210A TO264AA
IXGA30N60C3D4
IXGA30N60C3D4
IXYS
IGBT 600V 60A 220W TO263