IXYP10N65C3D1
  • Share:

IXYS IXYP10N65C3D1

Manufacturer No:
IXYP10N65C3D1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYP10N65C3D1 Datasheet
ECAD Model:
-
Description:
IGBT 650V 30A 160W TO-220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):54 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 10A
Power - Max:160 W
Switching Energy:240µJ (on), 110µJ (off)
Input Type:Standard
Gate Charge:18 nC
Td (on/off) @ 25°C:20ns/77ns
Test Condition:400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr):170 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$2.51
44

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYP10N65C3D1 IXYP20N65C3D1   IXYP10N65C3D1M   IXYP15N65C3D1   IXYP10N65B3D1  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active
IGBT Type PT PT - PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 30 A 50 A 15 A 38 A 32 A
Current - Collector Pulsed (Icm) 54 A 105 A 50 A 80 A 62 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A 2.5V @ 15V, 20A 2.6V @ 15V, 10A 2.5V @ 15V, 15A 1.95V @ 15V, 10A
Power - Max 160 W 200 W 53 W 200 W 160 W
Switching Energy 240µJ (on), 110µJ (off) 430µJ (on), 350µJ (off) 240µJ (on), 170µJ (off) 270µJ (on), 230µJ (off) 300µJ (on), 200µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 18 nC 30 nC 18 nC 19 nC 20 nC
Td (on/off) @ 25°C 20ns/77ns 19ns/80ns 20ns/77ns 15ns/68ns 17ns/125ns
Test Condition 400V, 10A, 50Ohm, 15V 400V, 20A, 20Ohm, 15V 400V, 10A, 50Ohm, 15V 400V, 15A, 20Ohm, 15V 400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr) 170 ns 135 ns 26 ns 110 ns 29 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220-3 TO-220 Isolated Tab TO-220-3 TO-220

Related Product By Categories

IGW30N60H3FKSA1
IGW30N60H3FKSA1
Infineon Technologies
IGBT 600V 60A 187W TO247-3
STGB30M65DF2
STGB30M65DF2
STMicroelectronics
IGBT 650V 30A D2PAK
IXYX110N120C4
IXYX110N120C4
IXYS
IGBT 1200V 110A GEN4 XPT PLUS247
FGA15N120ANDTU
FGA15N120ANDTU
onsemi
IGBT 1200V 24A 200W TO3P
IXGC12N60CD1
IXGC12N60CD1
IXYS
IGBT 600V 15A 85W ISOPLUS220
STGW40N120KD
STGW40N120KD
STMicroelectronics
IGBT 1200V 80A 240W TO247
IXBT32N300
IXBT32N300
IXYS
IGBT 3000V 80A 400W TO268
AUIRGP4062D-E
AUIRGP4062D-E
Infineon Technologies
IGBT 600V 48A TO247AD
IRGS4064DTRRPBF
IRGS4064DTRRPBF
Infineon Technologies
IGBT 600V 20A 101W D2PAK
IRGP4266D-EPBF
IRGP4266D-EPBF
Infineon Technologies
IGBT 650V 140A 455W TO247AD
AIHD15N60RATMA1
AIHD15N60RATMA1
Infineon Technologies
IC DISCRETE 600V TO252-3
RGWSX2TS65DGC13
RGWSX2TS65DGC13
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,

Related Product By Brand

VBO72-12NO7
VBO72-12NO7
IXYS
BRIDGE RECT 1P 1.2KV 72A PWS-D
DSA15IM45IB
DSA15IM45IB
IXYS
DIODE SCHOTTKY 45V 15A TO262
DSS25-0025B
DSS25-0025B
IXYS
DIODE SCHOTTKY 25V 25A TO220AC
MCC310-16IO1
MCC310-16IO1
IXYS
SCR DUAL 1600V 500A Y2-DCB
IXFN52N100X
IXFN52N100X
IXYS
MOSFET N-CH 1000V 44A SOT227B
IXFK94N50P2
IXFK94N50P2
IXYS
MOSFET N-CH 500V 94A TO264AA
IXFH160N15T2
IXFH160N15T2
IXYS
MOSFET N-CH 150V 160A TO247AD
IXTA18P10T
IXTA18P10T
IXYS
MOSFET P-CH 100V 18A TO263
IXFN26N90
IXFN26N90
IXYS
MOSFET N-CH 900V 26A SOT-227B
IXGN60N60
IXGN60N60
IXYS
IGBT MOD 600V 100A 250W SOT227B
IXSH35N100A
IXSH35N100A
IXYS
IGBT 1000V 70A 300W TO247AD
IXDE504D2T/R
IXDE504D2T/R
IXYS
IC GATE DRVR LOW-SIDE 8DFN