IXYP10N65B3D1
  • Share:

IXYS IXYP10N65B3D1

Manufacturer No:
IXYP10N65B3D1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYP10N65B3D1 Datasheet
ECAD Model:
-
Description:
DISC IGBT XPT-GENX3 TO-220AB/FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):32 A
Current - Collector Pulsed (Icm):62 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 10A
Power - Max:160 W
Switching Energy:300µJ (on), 200µJ (off)
Input Type:Standard
Gate Charge:20 nC
Td (on/off) @ 25°C:17ns/125ns
Test Condition:400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr):29 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$3.05
209

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYP10N65B3D1 IXYP10N65C3D1   IXYP20N65B3D1  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
IGBT Type PT PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 32 A 30 A 58 A
Current - Collector Pulsed (Icm) 62 A 54 A 108 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 10A 2.5V @ 15V, 10A 2.1V @ 15V, 20A
Power - Max 160 W 160 W 230 W
Switching Energy 300µJ (on), 200µJ (off) 240µJ (on), 110µJ (off) 500µJ (on), 450µJ (off)
Input Type Standard Standard Standard
Gate Charge 20 nC 18 nC 29 nC
Td (on/off) @ 25°C 17ns/125ns 20ns/77ns 12ns/103ns
Test Condition 400V, 10A, 50Ohm, 15V 400V, 10A, 50Ohm, 15V 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr) 29 ns 170 ns 25 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220

Related Product By Categories

IXGK100N170
IXGK100N170
IXYS
IGBT PT 1000V 120A TO-264
IXGR48N60C3D1
IXGR48N60C3D1
IXYS
IGBT 600V 56A 125W ISOPLUS247
IXYH16N170C
IXYH16N170C
IXYS
IGBT 1.7KV 40A TO247
HGT1S12N60C3R
HGT1S12N60C3R
Harris Corporation
24A, 600V N-CHANNEL IGBT
IKW03N120H
IKW03N120H
Infineon Technologies
IGBT WITH ANTI-PARALLEL DIODE
AOD5B65M1
AOD5B65M1
Alpha & Omega Semiconductor Inc.
IGBT 650V 5A TO252
IXLF19N250A
IXLF19N250A
IXYS
IGBT 2500V 32A 250W I4PAC
IKW20N60TA
IKW20N60TA
Infineon Technologies
IKW20N60 - AUTOMOTIVE IGBT DISCR
IXGH72N60B3
IXGH72N60B3
IXYS
IGBT 600V 75A 540W TO247
IRGR3B60KD2TRRP
IRGR3B60KD2TRRP
Infineon Technologies
IGBT 600V 7.8A 52W DPAK
FGH60N60UFDTU-F085
FGH60N60UFDTU-F085
onsemi
IGBT 600V 120A 298W TO247
STGWA80H65DFB
STGWA80H65DFB
STMicroelectronics
IGBT BIPO 650V 80A TO247-3

Related Product By Brand

MCC19-08IO8B
MCC19-08IO8B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
MCC44-16IO8B
MCC44-16IO8B
IXYS
MOD THYRISTOR DUAL 1600V TO240AA
MCC501-18IO2
MCC501-18IO2
IXYS
SCR THY PHASE LEG 1800V WC-501
IXTN210P10T
IXTN210P10T
IXYS
MOSFET P-CH 100V 210A SOT227B
IXFA110N15T2
IXFA110N15T2
IXYS
MOSFET N-CH 150V 110A TO263
IXFR140N30P
IXFR140N30P
IXYS
MOSFET N-CH 300V 70A ISOPLUS247
IXFN102N30P
IXFN102N30P
IXYS
MOSFET N-CH 300V 88A SOT227B
IXTA220N055T
IXTA220N055T
IXYS
MOSFET N-CH 55V 220A TO263
IXTV98N20T
IXTV98N20T
IXYS
MOSFET N-CH 200V 98A PLUS220
IXGT6N170
IXGT6N170
IXYS
IGBT 1700V 12A 75W TO268
IXDD404SI
IXDD404SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC
IXDD509SIAT/R
IXDD509SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC