IXYP10N65B3D1
  • Share:

IXYS IXYP10N65B3D1

Manufacturer No:
IXYP10N65B3D1
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYP10N65B3D1 Datasheet
ECAD Model:
-
Description:
DISC IGBT XPT-GENX3 TO-220AB/FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):32 A
Current - Collector Pulsed (Icm):62 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 10A
Power - Max:160 W
Switching Energy:300µJ (on), 200µJ (off)
Input Type:Standard
Gate Charge:20 nC
Td (on/off) @ 25°C:17ns/125ns
Test Condition:400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr):29 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$3.05
209

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYP10N65B3D1 IXYP10N65C3D1   IXYP20N65B3D1  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
IGBT Type PT PT PT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V
Current - Collector (Ic) (Max) 32 A 30 A 58 A
Current - Collector Pulsed (Icm) 62 A 54 A 108 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 10A 2.5V @ 15V, 10A 2.1V @ 15V, 20A
Power - Max 160 W 160 W 230 W
Switching Energy 300µJ (on), 200µJ (off) 240µJ (on), 110µJ (off) 500µJ (on), 450µJ (off)
Input Type Standard Standard Standard
Gate Charge 20 nC 18 nC 29 nC
Td (on/off) @ 25°C 17ns/125ns 20ns/77ns 12ns/103ns
Test Condition 400V, 10A, 50Ohm, 15V 400V, 10A, 50Ohm, 15V 400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr) 29 ns 170 ns 25 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220

Related Product By Categories

IXGH24N170
IXGH24N170
IXYS
IGBT 1700V 50A 250W TO247AD
IRGB20B60PD1PBF
IRGB20B60PD1PBF
Infineon Technologies
IGBT 600V 40A 215W TO220AB
IXGT25N160
IXGT25N160
IXYS
IGBT 1600V 75A 300W TO268
IXGX320N60A3
IXGX320N60A3
IXYS
IGBT 600V 320A 1000W PLUS247
GT8G133(TE12L,Q)
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage
IGBT 400V 600MW 8TSSOP
IRGI4060DPBF
IRGI4060DPBF
Infineon Technologies
IGBT 600V 14A 37W TO220ABFP
IXGH12N60C
IXGH12N60C
IXYS
IGBT 600V 24A 100W TO247AD
IHW25N120R2FKSA1
IHW25N120R2FKSA1
Infineon Technologies
IGBT 1200V 50A 365W TO247-3
NGTB15N60EG
NGTB15N60EG
onsemi
IGBT 600V 30A 117W TO220-3
RJH60F5BDPQ-A0#T0
RJH60F5BDPQ-A0#T0
Renesas Electronics America Inc
IGBT 600V 80A 260.4W TO-247A
IRG8P45N65UD1PBF
IRG8P45N65UD1PBF
Infineon Technologies
IGBT 650V 45A CO-PAK-247
FGY100T65SCDT
FGY100T65SCDT
onsemi
FS3TIGBT TO247 100A 650V

Related Product By Brand

DGSK28-025CS
DGSK28-025CS
IXYS
DIODE ARRAY SCHOTTKY 250V TO263
DSEI60-10A
DSEI60-10A
IXYS
DIODE GEN PURP 1KV 60A TO247AD
MCMA35PD1600TB
MCMA35PD1600TB
IXYS
SCR MODULE 1.6KV 35A TO240AA
MCO150-16IO1
MCO150-16IO1
IXYS
MOD THYRISTOR SGL 1600V SOT-227B
CS30-14IO1
CS30-14IO1
IXYS
SCR 1.4KV 49A TO247AD
IXFA230N075T2-7
IXFA230N075T2-7
IXYS
MOSFET N-CH 75V 230A TO263-7
IXFR80N50P
IXFR80N50P
IXYS
MOSFET N-CH 500V 45A ISOPLUS247
IXTA86N20T
IXTA86N20T
IXYS
MOSFET N-CH 200V 86A TO263
IXTY01N80
IXTY01N80
IXYS
MOSFET N-CH 800V 100MA TO252AA
IXFE44N50Q
IXFE44N50Q
IXYS
MOSFET N-CH 500V 39A SOT-227B
IXGR72N60B3H1
IXGR72N60B3H1
IXYS
IGBT 600V 75A 200W ISOPLUS247
IXXH75N60C3
IXXH75N60C3
IXYS
IGBT 600V 150A 750W TO247