IXYS-IXYK200N65B3 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	410 A
Current - Collector Pulsed (Icm):	1100 A
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 100A
Power - Max:	1560 W
Switching Energy:	5mJ (on), 4mJ (off)
Input Type:	Standard
Gate Charge:	340 nC
Td (on/off) @ 25°C:	60ns/370ns
Test Condition:	400V, 100A, 0Ohm, 15V
Reverse Recovery Time (trr):	108 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264

IXYS IXYK200N65B3