IXYS-IXYB82N120C3H1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	164 A
Current - Collector Pulsed (Icm):	320 A
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 82A
Power - Max:	1040 W
Switching Energy:	4.95mJ (on), 2.78mJ (off)
Input Type:	Standard
Gate Charge:	215 nC
Td (on/off) @ 25°C:	29ns/192ns
Test Condition:	600V, 80A, 2Ohm, 15V
Reverse Recovery Time (trr):	420 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	PLUS264™

IXYS IXYB82N120C3H1