IXYA20N120A4HV
  • Share:

IXYS IXYA20N120A4HV

Manufacturer No:
IXYA20N120A4HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYA20N120A4HV Datasheet
ECAD Model:
-
Description:
DISC IGBT XPT-GENX4 TO-263D2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):135 A
Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 20A
Power - Max:375 W
Switching Energy:3.6mJ (on), 2.75mJ (off)
Input Type:Standard
Gate Charge:46 nC
Td (on/off) @ 25°C:12ns/275ns
Test Condition:800mV, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):54 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263HV
0 Remaining View Similar

In Stock

$10.37
6

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYA20N120A4HV IXYA20N120C4HV   IXYA20N120B4HV   IXYA30N120A4HV  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
IGBT Type PT PT PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 80 A 68 A 76 A 106 A
Current - Collector Pulsed (Icm) 135 A 120 A 130 A 184 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A 2.5V @ 15V, 20A 2.1V @ 15V, 20A 1.9V @ 15V, 25A
Power - Max 375 W 375 W 375 W 500 W
Switching Energy 3.6mJ (on), 2.75mJ (off) 4.4mJ (on), 1mJ (off) 3.9mJ (on), 1.6mJ (off) 4mJ (on), 3.4mJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 46 nC 44 nC 44 nC 57 nC
Td (on/off) @ 25°C 12ns/275ns 14ns/160ns 15ns/200ns 15ns/235ns
Test Condition 800mV, 20A, 10Ohm, 15V 960mV, 20A, 10Ohm, 15V 960mV, 20A, 10Ohm, 15V 960V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr) 54 ns 53 ns 47 ns 42 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263HV TO-263HV TO-263HV TO-263HV

Related Product By Categories

IHW20N65R5XKSA1
IHW20N65R5XKSA1
Infineon Technologies
IGBT 650V 40A TO247-3
ISL9V3036S3ST
ISL9V3036S3ST
Fairchild Semiconductor
IGBT, 360V, 17A, 1.58V, 300MJ, D
IHW40N65R5XKSA1
IHW40N65R5XKSA1
Infineon Technologies
IGBT 650V 80A TO247-3
AIKW40N65DH5XKSA1
AIKW40N65DH5XKSA1
Infineon Technologies
IC DISCRETE 650V TO247-3
FGHL50T65MQD
FGHL50T65MQD
onsemi
IGBT 650V 50A TO247
IRG4IBC10UD
IRG4IBC10UD
Infineon Technologies
IGBT 600V 6.8A 25W TO220FP
HGTP20N60A4
HGTP20N60A4
onsemi
IGBT 600V 70A TO220-3
IXGR40N60B2D1
IXGR40N60B2D1
IXYS
IGBT 600V 60A 167W ISOPLUS247
IXGQ120N30TCD1
IXGQ120N30TCD1
IXYS
IGBT 300V 120A TO3P
IXBT20N300
IXBT20N300
IXYS
IGBT 3000V 50A 250W TO268
RJH60A83RDPD-A0#J2
RJH60A83RDPD-A0#J2
Renesas Electronics America Inc
IGBT 600V 10A
RGS30TSX2GC11
RGS30TSX2GC11
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12

Related Product By Brand

DSA20C150PB
DSA20C150PB
IXYS
DIODE ARRAY SCHOTTKY 150V TO220
MCD72-12IO8B
MCD72-12IO8B
IXYS
MOD THYRISTOR/DIO 1200V TO-240AA
MCC220-16IO1
MCC220-16IO1
IXYS
MOD THYRISTOR DUAL 1600V Y2-DCB
IXFK32N100P
IXFK32N100P
IXYS
MOSFET N-CH 1000V 32A TO264AA
IXFH94N30P3
IXFH94N30P3
IXYS
MOSFET N-CH 300V 94A TO247
IXFN180N20
IXFN180N20
IXYS
MOSFET N-CH 200V 180A SOT-227B
IXFX90N20Q
IXFX90N20Q
IXYS
MOSFET N-CH 200V 90A PLUS247-3
IXBF20N360
IXBF20N360
IXYS
IGBT 3600V 45A ISOPLUS I4PAK
IXGH24N60A
IXGH24N60A
IXYS
IGBT 600V 48A 150W TO247AD
IXGA7N60B
IXGA7N60B
IXYS
IGBT 600V 14A 54W TO263
IXGH20N100
IXGH20N100
IXYS
IGBT 1000V 40A 150W TO247
IXGA30N60C3D4
IXGA30N60C3D4
IXYS
IGBT 600V 60A 220W TO263