IXYA20N120A4HV
  • Share:

IXYS IXYA20N120A4HV

Manufacturer No:
IXYA20N120A4HV
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXYA20N120A4HV Datasheet
ECAD Model:
-
Description:
DISC IGBT XPT-GENX4 TO-263D2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):135 A
Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 20A
Power - Max:375 W
Switching Energy:3.6mJ (on), 2.75mJ (off)
Input Type:Standard
Gate Charge:46 nC
Td (on/off) @ 25°C:12ns/275ns
Test Condition:800mV, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):54 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263HV
0 Remaining View Similar

In Stock

$10.37
6

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXYA20N120A4HV IXYA20N120C4HV   IXYA20N120B4HV   IXYA30N120A4HV  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
IGBT Type PT PT PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 80 A 68 A 76 A 106 A
Current - Collector Pulsed (Icm) 135 A 120 A 130 A 184 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A 2.5V @ 15V, 20A 2.1V @ 15V, 20A 1.9V @ 15V, 25A
Power - Max 375 W 375 W 375 W 500 W
Switching Energy 3.6mJ (on), 2.75mJ (off) 4.4mJ (on), 1mJ (off) 3.9mJ (on), 1.6mJ (off) 4mJ (on), 3.4mJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 46 nC 44 nC 44 nC 57 nC
Td (on/off) @ 25°C 12ns/275ns 14ns/160ns 15ns/200ns 15ns/235ns
Test Condition 800mV, 20A, 10Ohm, 15V 960mV, 20A, 10Ohm, 15V 960mV, 20A, 10Ohm, 15V 960V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr) 54 ns 53 ns 47 ns 42 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263HV TO-263HV TO-263HV TO-263HV

Related Product By Categories

SGB15N40CLT4
SGB15N40CLT4
onsemi
IGBT D2PAK SP 400V TR
IKQ75N120CH3XKSA1
IKQ75N120CH3XKSA1
Infineon Technologies
IGBT 1200V 150A TO247-3-46
STGP8NC60KD
STGP8NC60KD
STMicroelectronics
IGBT 600V 15A 65W TO220
SKW25N120FKSA1
SKW25N120FKSA1
Infineon Technologies
IGBT 1200V 46A 313W TO247-3
APT35GP120B2D2G
APT35GP120B2D2G
Microchip Technology
IGBT PT COMBI 1200V 35A TO-247
IRG4BC30S-S
IRG4BC30S-S
Infineon Technologies
IGBT 600V 34A 100W D2PAK
STGD3NB60HDT4
STGD3NB60HDT4
STMicroelectronics
IGBT 600V 10A 50W DPAK
NGD8201NT4G
NGD8201NT4G
onsemi
IGBT 440V 20A 125W DPAK
IRGS4620DPBF
IRGS4620DPBF
Infineon Technologies
IGBT 600V 32A 140W D2PAK
NGTB50N60FLWG
NGTB50N60FLWG
onsemi
IGBT 600V 50A TO247
SIGC57T120R3LEX1SA3
SIGC57T120R3LEX1SA3
Infineon Technologies
IGBT 1200V 50A DIE
RGTH00TS65DGC13
RGTH00TS65DGC13
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V

Related Product By Brand

VUO160-16NO7
VUO160-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 175A PWS-E1
MEA75-12DA
MEA75-12DA
IXYS
DIODE MODULE 1.2KV 75A TO240AA
DSB60C60PB
DSB60C60PB
IXYS
DIODE ARRAY SCHOTTKY 60V TO220AB
DSDI60-18A
DSDI60-18A
IXYS
DIODE GEN PURP 1.8KV 63A TO247AD
DSS10-01AS-TRL
DSS10-01AS-TRL
IXYS
DIODE SCHOTTKY 100V 10A TO263AB
MCD26-14IO8B
MCD26-14IO8B
IXYS
MOD THYRISTOR/DIO 1400V TO-240AA
MCC26-14IO8B
MCC26-14IO8B
IXYS
MODULE,DUAL THYRISTOR,2X50A,1500
IXTQ50N25T
IXTQ50N25T
IXYS
MOSFET N-CH 250V 50A TO3P
IXFP72N30X3
IXFP72N30X3
IXYS
MOSFET N-CH 300V 72A TO220AB
IXTQ230N085T
IXTQ230N085T
IXYS
MOSFET N-CH 85V 230A TO3P
IXFX14N100
IXFX14N100
IXYS
MOSFET N-CH 1000V 14A PLUS247-3
IXSX80N60B
IXSX80N60B
IXYS
IGBT 600V 160A 500W PLUS247