IXYS-IXXQ30N60B3M - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	33 A
Current - Collector Pulsed (Icm):	140 A
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 24A
Power - Max:	90 W
Switching Energy:	550µJ (on), 800µJ (off)
Input Type:	Standard
Gate Charge:	39 nC
Td (on/off) @ 25°C:	23ns/150ns
Test Condition:	400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr):	36 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

IXYS IXXQ30N60B3M