IXYS-IXXP12N65B4D1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	38 A
Current - Collector Pulsed (Icm):	70 A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 12A
Power - Max:	160 W
Switching Energy:	440µJ (on), 220µJ (off)
Input Type:	Standard
Gate Charge:	34 nC
Td (on/off) @ 25°C:	13ns/158ns
Test Condition:	400V, 12A, 20Ohm, 15V
Reverse Recovery Time (trr):	43 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

IXYS IXXP12N65B4D1