IXYS-IXXN200N65A4 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	440 A
Current - Collector Pulsed (Icm):	1200 A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 200A
Power - Max:	1250 W
Switching Energy:	8.8mJ (on), 6.7mJ (off)
Input Type:	Standard
Gate Charge:	736 nC
Td (on/off) @ 25°C:	140ns/1.04µs
Test Condition:	400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr):	160 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B

IXYS IXXN200N65A4